Temperature-Dependent Calibration and Modeling of Resistive Random Access Memory (RRAM)
主 讲 人 ：Zizhen Jiang
活动时间：02月28日14时30分
地 点 ：理科群2号楼B409室
讲座内容：
Metal-oxide resistive random access memory (RRAM) is a competitive emerging memory candidate; as it offers the potential for high storage density (~ 4 F2), fast speed (~ 5 ns) and low energy consumption (<pJ). Extensive research has been conducted to improve the device performance and understand the resistive switching mechanisms. Electric field, Soret force and Fick force are the microscopic origins for the oxygen ion/vacancy migration. These three forces may be present simultaneously during the switching. Soret force moves the oxygen ion from a hotter to a cooler region due to temperature gradient. Fick diffusion moves the oxygen ion from high ion concentration to a lower concentration region. The development of the RRAM device technology leads to interest in exploring possible applications. The array sizes demonstrated have been increasing, reaching 32 Gb in 2013. At the same time, several 3D RRAM concepts have been reported, providing possible solutions to complement ultra-high density 3D NAND. Beyond traditional data storage, various RRAM applications have been reported, such as using RRAM devices in neuromorphic systems, TCAM, and non-volatile SRAM. This talk will address our recent progress including the temperature-dependent calibration and the development of the circuit-compatible analytical model.
Reference
[1] https://nano.stanford.edu/stanford-memory-trends
[2] Z. Jiang et al., "Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)," 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2016, pp. 21.3.1-21.3.4.
[3] Z. Jiang et al., "A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification," in IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1884-1892, May 2016.
主讲人介绍：
Zizhen Jiang, Ph.D. Candidate, Department of Electrical Engineering, Stanford University, Stanford, CA, USA. She received the B.S. degree from Peking University, Beijing, China. She joined Stanford University in 2012. Her current research interests include resistive random access memory device and technology, including modeling and fabrication.
发布时间：2017-02-23 07:58:14
